2003. 1. 15 1/2 semiconductor technical data ktc3200 epitaxial planar npn transistor revision no : 1 low noise audio amplifier application. features the ktc3200 is a transistor for low frequency and low noise applications. this device is designed to ower noise figure in the region of low signal source impedance, and to lower the pulse noise. this is recommended for the first stages of equalizer amplifiers. low noise : nf=4db(typ.), rg=100 , v ce =6v, i c =100 a, f=1khz : nf=0.5db(typ.), rg=1k , v ce =6v, i c =100 a, f=1khz. low pulse noise : low 1/f noise. high dc current gain : h fe =200 700. high breakdown voltage : v ceo =120v . complementary to kta1268. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 ) note : h fe classification gr:200 400, bl:350 700 characteristic symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5 v collector current i c 100 ma emitter current i e -100 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =120v, i e =0 - - 100 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 120 - - v dc current gain h fe (note) v ce =6v, i c =2ma 200 - 700 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.3 v base-emitter voltage v be v ce =6v, i c =2ma - 0.65 - v transition frequency f t v ce =6v, i c =1ma - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 3.0 - pf noise figure nf v ce =6v, i c =100 a, f=10hz, rg=10k - - 6.0 db v ce =6v, i c =100 a, f=1khz, rg=10k - - 2.0 v ce =6v, i c =100 a f=1khz, rg=100 - 4.0 -
2003. 1. 15 2/2 ktc3200 revision no : 1 10 100k 10k 1k 100 10 100 1k 10k c g nf - r , i signal source resistance r ( ? ) g collector current i ( a) c common emitter ce f=10hz v =6v 12 10 8 6 4 3 2 nf=1db nf=1db nf=1db nf=1db 2 2 3 3 4 4 6 6 8 8 10 10 12 12 2 3 4 6 8 10 12 10 dc current gain h fe 1k 300 100 1 0.1 collector current i (ma) c h - i fe c 10 3 0.3 30 100 30 50 300 500 common emitter v =6v ce ta=100 c ta=25 c ta=-25 c c - v cb collector-base voltage v (v) 0 ob 1 collector output capacitance ob cb c (pf) 10 20 30 40 50 60 70 80 3 5 10 f=1mhz i =0 ta=25 c e 10 h parameter 1 300 200 100 1 0.5 collector-emitter voltage v (v) ce h parameter - v ce 35 10 3050 3 5 30 50 common emitter i =-1ma f=270hz ta=25 c e h fe ie h ( x k ? ) ( x 10 ) h re -5 ( x ) h oe 100 ? collector current i ( a) nf - r , i g signal source resistance r ( ? ) c c g 10 100 100 10 1k 10k 1k 10k 100k emitter common v =6v f=1khz ce
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